Breakthrough in Gallium Oxide Crystal Growth: A New Era for Fourth-Generation Semiconductors
Summary:
- The Shanghai Institute of Optics and Mechanics and Hangzhou Fuga Gallium Technology have achieved a world-first with the successful preparation of an 8-inch gallium oxide crystal.
- Gallium oxide is pivotal for fourth-generation semiconductors, offering superior performance for ultra-high voltage applications.
- The vertical Bridgman method (VB method) demonstrates a cost-effective and scalable approach for industrial applications of gallium oxide.
On December 27, a significant milestone was achieved in semiconductor technology when the Shanghai Institute of Optics and Mechanics, in collaboration with Hangzhou Fuga Gallium Technology, prepared the world’s first 8-inch gallium oxide crystal using the vertical Bridgman method (VB method). This groundbreaking development is marked by the strategic support from the Fourth Generation Semiconductor Strategic Frontier Project initiated by the Shanghai Municipal Science and Technology Commission.
The Significance of Gallium Oxide
Gallium oxide has emerged as a leading material in the fourth-generation semiconductor industry. Characterized by its large band gap and high breakdown field strength, gallium oxide holds immense potential for ultra-high voltage power devices. Its properties enable enhanced performance in various applications, paving the way for advancements in power efficiency and device reliability.
A Historical Context of Innovation
The Shanghai Institute of Optics and Mechanics has been at the forefront of gallium oxide crystal research since its inception. In collaboration with Fuga Gallium, the institute has made notable strides in refining three core technologies essential for the VB method: key equipment manufacturing, high-precision simulation, and deterministic thermal field design. This partnership successfully led to the production of 3-inch gallium oxide crystals for the first time in China in July 2024, followed by 4-inch crystals in December 2024, and later, 6-inch crystals in September 2025. The recent achievement of an 8-inch crystal represents a new international record for VB method production.
Advantages of the VB Method
The vertical Bridgman method offers several significant advantages over traditional crystal growth techniques, positioning it as an optimal choice for large-scale industrialization:
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Cost Efficiency: One of the primary benefits of the VB method is that it does not require the use of iridium, which significantly reduces production costs.
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Uniform Growth Conditions: The method provides a stable temperature field with minimal gradients, facilitating the growth of large-sized, high-quality gallium oxide crystals.
- Improved Material Efficiency: The ability to grow columnar crystals enhances the efficiency of the material preparation process, making it particularly suitable for automated and large-scale production.
Future Prospects
Looking ahead, the Shanghai Institute of Optics and Mechanics and Fuga Gallium Technology plan to collaborate closely with downstream users to validate the application of gallium oxide materials in devices. This partnership aims to continually improve the properties of both the materials and devices, solidifying gallium oxide’s role in next-generation industrial applications.
The rapid development and industrial application of gallium oxide are expected to revolutionize the semiconductor landscape, providing unparalleled performance in power devices and opening up new avenues for technology in energy-efficient systems.
As this technology progresses, stakeholders in the semiconductor industry should keep a close eye on the advancements being made, as the commercial viability of gallium oxide could lead to significant transformations across various electronic sectors.
With this pioneering work, the Shanghai Institute of Optics and Fuga Gallium have set a new standard in semiconductor crystal growth, heralding a promising future for gallium oxide and its applications in next-generation technologies. The ongoing efforts and collaborative spirit in this field are not only commendable but pivotal for the continued advancement of semiconductor technology.
This breakthrough not only showcases the innovation capabilities of Chinese research institutions but also positions gallium oxide at the forefront of materials science and engineering. As the semiconductor landscape evolves, staying updated on these developments can provide strategic insights for future investments and applications in the technology sector.
